[1]Song, Weidong,Wang, Xingfu,Xia, Chao,Wang, Rupeng,Zhao, Liangliang,Guo, Dexiao,Chen, Hang,Xiao, Jiakai,Su, Shichen,Li, Shuti*, Improved photoresponse of a-axis GaN microwire/p-polymer hybrid photosensor by the piezo-phototronic effect,Nano Energy,2017,33:272.
[2]Wang, Xingfu,Yu, Ruomeng,Jiang, Chunyan,Hu, Weiguo,Wu,Wenzhuo,Ding, Yong,Peng, Wenbo,Wang Zhong Lin,Li, Shuti*, Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire,Advanced Materials,2016,28:7234.
[3]Zhang ChongZhen,He Miao,Song Wei-Dong,Hu Wenxiao,Qin Ping,Zhao Liangliang,Wang RuPeng,Yuan Song-Yang, Li, Shuti*,Thermal flow air post-treatment under high relative humidity for efficient and reproducible planar CH3NH3PbI3-xClx based perovskite solar cells,Optical and Quantum Electronics,2016,48: 449.
[4]Hu Wenxiao,Qin Ping,Song Weidong,Zhang Chongzhen,Wang Rupeng,Zhao Liangliang,Xia Chao,Yuan Songyang,Yin Yian, Li Shuti*,Ultraviolet light-emitting diodes with polarization-doped p-type layer,Superlattices and Microstructures, 2016,97:353.
[5]Yu Ruomeng,Wang Xingfu,Peng Wenbo,Wu Wenzhuo,Ding Yong,Wang, Zhong Lin, Li Shuti*,Piezotronic Effect in Strain-Gated Transistor of a-Axis GaN Nanobelt,ACS Nano,2015,9:9822.
[6] Xingfu Wang, Jinhui Tong, Xin Chen, Bijun Zhao, Zhiwei Ren, Danwei Li, Xiangjing Zhuo, Jun Zhang, Hanxiang Yi, Chao Liu, Fang Fang, Shuti Li*, Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties, Chem. Commun. 50: 682, 2014.
[7] Chao Liu, Zhiwei Ren, Xin Chen, Bijun Zhao, Xingfu Wang, and Shuti Li*, Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer, IEEE Photonics Technology Letters, 26: 134, 2014
[8] Zhiwei Ren, Shuti Li*, Chao Liu, Xin Chen, Bijun Zhao, Xinfu Wang, Enhanced performance of InGaN/GaN based solar cells with an In0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well, Optics Express, 21: 7118, 2013.
[9] Tong Jinhui, Zhao Bijun, Wang Xingfu, Chen Xin, Li Danwei, Zhuo Xiangjing, Zhang Jun, Li Shuti*, Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers, Chin. Phys. B, 22:068505, 2013.
[10] Chen Xin, Zhao Bijun, Tong Jinhui, Li Danwei, Zhuo Xiangjing, Li Shuti*, Advantages of InGaN/GaN multiple quantum well solar cells with stepped thickness quantum wells, Chin. Phys. B, 22:078402, 2013.
[11] Taiping Lu, Shuti Li*, Chao Liu, Kang Zhang, Yiqing Xu, Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer, Appl. Phys. Lett., 100, 141106-141108, 2012.
[12] Chao Liu, Taiping Lu, Lejuan Wu, Hailong Wang, and Shuti Li*, Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer, IEEE Photonics Technoligy Letters, 24, 1239-1241, 2012
[13] Wu Le-Juan, Li Shu-Ti*, Liu Chao, Wang Hai-Long, Lu Tai-Ping, Zhang Kang, Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers, Chin. Phys. B, 21, 068506 , 2012.
[14] Tong Jin-Hui, Li Shu-Ti*, Lu Tai-Ping, Liu Chao, Wang Hai-Long, Wu Le-Juan, Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers, Chin. Phys. B, 21, 118502, 2012
[15] Taiping Lu, Shuti Li*, et al. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes, Optics Express, 19:18319, 2011.
[16] Shuti Li, Chao Liu, Yian Yin, Tianming Zhou, et al. Study of GaP single crystal layers grown on GaN by MOCVD, Materials Research Bulletin,, 46: 1942, 2011.
[17] Lu Tai-Ping, Li Shu-Ti*, Blue InGaN light-emitting diodes with dip-shaped quantum wells, Chinese Physics B, 20:108504, 2011.
[18] Lu Tai-Ping, Li Shu-Ti*, The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer, Chinese Physics B, 9:098503, 2011.
[19] Jianxing Cao, Shuti Li*, GuanghanFan, Chen Xin, et al. The influence of the Al pre-deposition on the properties of AlN and GaN layer grown on Si (111) substrate, J. Crystal growth, 312: 2044, 2010.
[20] Shuti Li, Jun Su, Guanghan Fan,Tianming Zhou, et al. GaP:Mg layers grown on GaN by MOCVD, J. Crystal growth, 312: 3101, 2010.
[21] Li Shu-Ti, Cao Jian-Xing, Fan Guang-Han, et al. GaP layers grown on GaN with and without buffer layer, Chin. Phys. B, 19:107206, 2010.
[22] Song, Weidong,Wang, Xingfu,Xia, Chao,Wang, Rupeng,Zhao, Liangliang,Guo, Dexiao,Chen, Hang,Xiao, Jiakai,Su, Shichen,Shuti Li*, Improved photoresponse of a-axis GaN microwire/p-polymer hybrid photosensor by the piezo-phototronic effect,Nano Energy,2017,33:272.
[23] Wang, Xingfu,Yu, Ruomeng,Jiang, Chunyan,Hu, Weiguo,Wu,Wenzhuo,Ding, Yong,Peng, Wenbo,Wang Zhong Lin,Shuti Li*, Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire,Advanced Materials,2016,28:7234.
[24] Zhang ChongZhen,He Miao,Song Wei-Dong,Hu Wenxiao,Qin Ping,Zhao Liangliang,Wang RuPeng,Yuan Song-Yang,Shuti Li*,Thermal flow air post-treatment under high relative humidity for efficient and reproducible planar CH3NH3PbI3-xClx based perovskite solar cells,Optical and Quantum Electronics,2016,48: 449.
[25] Hu Wenxiao,Qin Ping,Song Weidong,Zhang Chongzhen,Wang Rupeng,Zhao Liangliang,Xia Chao,Yuan Songyang,Yin Yian, Shuti Li*,Ultraviolet light-emitting diodes with polarization-doped p-type layer,Superlattices and Microstructures, 2016,97:353.
[26] Yu Ruomeng,Wang Xingfu,Peng Wenbo,Wu Wenzhuo,Ding Yong,Wang, Zhong Lin, Shuti Li*,Piezotronic Effect in Strain-Gated Transistor of a-Axis GaN Nanobelt,ACS Nano,2015,9:9822.