Dr. Shuti Li, majoring in physics and chemistry, completed his Ph.D. at Nanchang University in China in 2002. He started to work at the Institute of Optoelectronic Materials and Technology (IOMT) at South China Normal University (SCNU). During the period he successively went to the University of Cambridge and Thomas Swan company to conduct academic exchanges and technical training.

He has published More than 40 papers in core journals at abroad. He first reported the undoped GaN blue luminescence mechanism and its relationship with deep acceptor. For the first time the growth of InGaP materials was realized in nitride materials. He has been engaged in semiconductor optoelectronic materials growth and device fabrication. Especially, he has accumulated plentiful experience in epitaxial growth of GaN and AlGaInP based materials by MOCVD, as well as in device design and fabrication as LED, thin film solar cells and GaN based micro(opto)electronic devices.

E-mail: lishuti@scnu.edu.cn